tm july 2007 ?2007 fairchild semiconductor corporation FDFS2P753AZ rev.b www.fairchildsemi.com 1 FDFS2P753AZ integrated p-channel powertrench ? mosfet and schottky diode FDFS2P753AZ integrated p-chan nel powertrench ? mosfet and schottky diode -30v, -3a, 115m ? features ? max r ds(on) = 115m ? at v gs = -10v, i d = -3.0a ? max r ds(on) = 180m ? at v gs = -4.5v, i d = -1.5a ? v f < 0.45v @ 2a v f < 0.28v @ 100ma ? schottky and mosfet incorporated into single power surface mount so-8 package ? electrically independent schottk y and mosfet pinout for design flexibility ? rohs compliant general description the FDFS2P753AZ offers a single package solution for dc/dc conversion. it combines an exce llent fairchild?s powertrench mosfet with a schottky diode in an so-8 package. the mosfet features a low on-state resistance and an optimized gate charge to achieve fast switching. the independently connected schottky diode has a low forward voltage drop to minimize power loss. this devic e is an ideal dc-dc solution for up to 3a peak load current. applications ? dc - dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -30 v v gs gate to source voltage 25 v i d drain current -continuous (note 1a) -3 a -pulsed -16 p d power dissipation t c = 25c 3.1 w power dissipation t a = 25c (note 1a) 1.6 e as single pulse avalanche energy (note 2) 6 mj v rrm schottky repetitive peak reverse voltage 30 v i o schottky average forward current 2 a t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 40 c/w r ja thermal resistance, junction to ambient (note 1a) 78 device marking device package reel size tape width quantity FDFS2P753AZ FDFS2P753AZ so-8 330mm 12mm 2500units d c c d pin 1 so-8 g a a s g a a s d d c c 5 6 7 8 3 2 1 4
FDFS2P753AZ integrated p-channel powertrench ? mosfet and schottky diode www.fairchildsemi.com 2 ?2007 fairchild semiconductor corporation FDFS2P753AZ rev.b electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 p a, v gs = 0v -30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = -250 p a, referenced to 25 c -21 mv/ c i dss zero gate voltage drain current v ds = -24v, -1 p a v gs = 0v t j = 125 c -100 i gss gate to source leakage current v gs = 25v, v ds = 0v 10 p a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 p a -1.0 -2.1 -3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = -250 p a, referenced to 25 c 5 mv/ c r ds(on) static drain to source on resistance v gs = -10v, i d = -3.0a 69 115 m : v gs = -4.5v, i d = -1.5a 115 180 v gs = -10v, i d = -3.0a, t j = 125 c 97 162 g fs forward transconductance v dd = -5v, i d = -3.0a 6 s dynamic characteristics c iss input capacitance v ds = -15v, v gs = 0v, f = 1mhz 330 455 pf c oss output capacitance 60 110 pf c rss reverse transfer capacitance 55 100 pf r g gate resistance f = 1mhz 18 : switching characteristics t d(on) turn-on delay time v dd = -15v, i d = -3.0a, v gs = -10v, r gen = 6 : 6 12 ns t r rise time 4 10 ns t d(off) turn-off delay time 19 34 ns t f fall time 15 27 ns q g total gate charge v gs = 0v to -10v v dd = -15v, i d = -3.0a 7.9 11.0 nc q g total gate charge v gs = 0v to -4.5v 4.1 5.7 nc q gs gate to source charge 1.3 nc q gd gate to drain ?miller? charge 2.0 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = -2.0a (note 3) -0.9 -1.2 v t rr reverse recovery time i f = -3.0a, di/dt = 100a/ p s 20 30 ns q rr reverse recovery charge 14 21 nc schottky diode characteristics v r reverse breakdown voltage i r = 1ma 30 v i r reverse leakage v r = 10v t j = 25 c 39 250 p a t j = 125 c 18 ma v f forward voltage i f = 100ma t j = 25 c 225 280 mv t j = 125 c 140 i f = 2a t j = 25 c 364 450 t j = 125 c 290
FDFS2P753AZ integrated p-channel powertrench ? mosfet and schottky diode www.fairchildsemi.com 3 ?2007 fairchild semiconductor corporation FDFS2P753AZ rev.b notes: 1.r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user?s board design. 2. starting t j = 25c, l = 3 mh, i as = -2a, v dd = -27v, v gs = -10v. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. a. 78c/w when mounted on a 0.5 in 2 pad of 2 oz copper. b. 135c/w when mounted on a minimum pad of 2 oz copper.
FDFS2P753AZ integrated p-channel powertrench ? mosfet and schottky diode www.fairchildsemi.com 4 ?2007 fairchild semiconductor corporation FDFS2P753AZ rev.b typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 4 8 12 16 v gs = -10v v gs = -4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = - 4v v gs = -3.5v v gs = -5v -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0481216 0.5 1.0 1.5 2.0 2.5 3.0 v gs = -5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) v gs = -4.5xv v gs = -4v v gs = -3.5v v gs = -10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -3a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 50 100 150 200 250 300 350 400 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d = -1.5a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage ( v ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0123456 0 4 8 12 16 v dd = -5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) 20 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDFS2P753AZ integrated p-channel powertrench ? mosfet and schottky diode www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FDFS2P753AZ rev.b figure 7. 0246810 0 2 4 6 8 10 i d = -3a v dd = -15v v dd = -10v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -20v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 30 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 1 2 3 4 5 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) -i as , avalanche current(a) 2 u n c l a m p e d i n d u c t i v e switching capability figure 10. 0 5 10 15 20 25 30 10 -8 10 -7 10 -6 10 -5 10 -4 v gs = 0v t j = 25 o c t j = 125 o c -v gs , gate to source voltage(v) -i g , gate leakage current(a) gate leakage current vs gate to source volatge figure 11. 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r t ja = 78 o c/w v gs = -10v v gs = -4.5v -i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature figure 12. 0.1 1 10 0.01 0.1 1 10 dc 10s 1s 100ms 10ms 1ms -i d , drain current (a) -v ds , drain to source voltage (v) 20 this area is limited by r ds(on) single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c 80 f o r w a r d b i a s s a f e operating area typical characteristics t j = 25c unless otherwise noted
FDFS2P753AZ integrated p-channel powertrench ? mosfet and schottky diode www.fairchildsemi.com 6 ?2007 fairchild semiconductor corporation FDFS2P753AZ rev.b figure 13. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = 25 o c t j = 125 o c i f, forward current(a) v f, forward voltage(v) schottky diode forward voltage figure 14. schottky diode reverse current 0 5 10 15 20 25 30 0.01 0.1 1 10 100 t j = 25 o c t j = 125 o c i r , reverse leakage current (ma) v r , reverse voltage (v) figure 15. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 p (pk) , peak transient power (w) v gs = -10v single pulse r t ja = 135 o c/w t a = 25 o c t, pulse width (s) 50 0.5 single pulse maximum power dissipation figure 16. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 single pulse r t ja = 135 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
www.fairchildsemi.com FDFS2P753AZ integrated p-channel powertrench ? mosfet and schottky diode ?2007 fairchild semiconductor corporation FDFS2P753AZ rev.b trademarks the following are registered and unregistered trademarks and se rvice marks fairchild semic onductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, functio n, or design. fairchild does not ass ume any liability arising out of the application or use of any product or circuit describe d herein; neither does it convey any license under its patent rights, nor the rights of others. these s pecifications do not expand the terms of fairchild?s worldwide terms and cond itions, specifically the warranty th erein, which covers these products. life support policy fairchild?s products are not author ized for use as critical components in life support devices or systems without the express written approval of fairchild semico nductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, c an be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resourse sm green fps? green fps? e-series? got? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfeet? micropak? motion-spm? optologic ? optoplanar ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this data sheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet c ontains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. obsolete not in production this datasheet cont ains specifications on a product that has been discontinued by fairchild semiconductor.the datasheet is printed for reference information only. rev. i29 tm tm
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